********************************************************************** * Device Library for SPICE2G.6 ver.1.01 Student ed. * * * * You can edit and use this library * * with SPICE2G.6 and PSpice. * * * * !! FOR PERSONAL USE AND EDUCATION !! * * * ********************************************************************** *** DIODES *** *Zener, Switch, P=10W, 12V .MODEL DZENER D(Is=0.1p Rs=0.1 Cjo=4p Tt=15n BV=12) * * Signal detector, switch eg. 1S1588 .MODEL DSIG D(Is=1.00f Rs=5 Ikf=0 Cjo=2p M=.4 + Vj=.7 Isr=20n Nr=2 Bv=50 Tt=1n) * * Schottky for signal .MODEL DSBT D(Is=20n Rs=30 Ikf=20m Eg=.69 Cjo=2p + M=.35 Vj=.7 Fc=.5 Isr=15n Nr=2 Bv=60 Tt=0) * * Rectifier 1A eg.10D10 .MODEL DRR1 D(Is=6.4f Rs=50m Ikf=0 Cjo=30p + M=.32 Vj=.75 Fc=.5 Isr=4.5u Nr=2 Bv=1.5K Ibv=50u Tt=5u) * *** BIPOLAR JUNCTION TRANSISTOR *** *NPN *Low frequency low noise amp. hfe=100 .MODEL QNPN100 NPN(Is=1p Xti=3 Eg=1.11 Vaf=30 Bf=100 Ne=1.5 Ise=1.5p + Ikf=660m Xtb=1.5 Br=3.0 Nc=2 Isc=0 Ikr=0 Rc=0.65 Rb=26 + Cjc=8p Mjc=.35 Vjc=.75 Fc=.5 Cje=25p Mje=.35 Vje=.70 + Tr=110n Tf=3.2n) * *PNP *Low frequency low noise amp. hfe=100 .MODEL QPNP100 PNP(Is=.1p Xti=3 Eg=1.11 Vaf=30 Bf=100 Ne=1.5 Ise=0.5p + Ikf=660m Xtb=1.5 Br=5.5 Nc=2 Isc=0 Ikr=0 Rc=1.5 Rb=18 + Cjc=10p Mjc=.35 Vjc=.75 Fc=.5 Cje=25p Mje=.35 Vje=.70 + Tr=58n Tf=3n) * *** JFET *** *N-CHANNEL *High frequency low noise Vto=-3 Yfs=1m Idss=9m .MODEL JNFET NJF(Beta=1m Betatce=-.5 Vto=-3 Vtotc=-2.5m Rd=10 Rs=10 + Lambda=5m Is=60f Isr=1.5p N=1 Nr=2 Xti=3 Alpha=10u + Vk=106 Cgd=1.5p M=.5 Pb=1 Fc=.5 Cgs=4.5p) * *P-CHANNEL *High frequency low noise Vto=-3 Yfs=1m Idss=10m .MODEL JPFET PJF(Beta=1m Betatce=-.5 Vto=-3 Vtotc=-2.5m Rd=10 Rs=10 + Lambda=20m Is=200f Isr=2p N=1 Nr=2 Xti=3 Alpha=30u + Vk=300 Cgd=2.2p M=.5 Pb=1 Fc=.5 Cgs=3p) * *** MOSFET *** *5u Rule Logic NMOS .MODEL NMOS1 NMOS(Level=2 Vto=0.5 Kp=35.2E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=4.9E-4 Cjsw=245p Ld=3E-7 Pb=0.94 Tox=50n Lambda=0.02 Uo=550 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) *ASIC Circ. Sim., p.123 * *5u Rule Logic PMOS .MODEL PMOS1 PMOS(Level=2 Vto=-0.5 Kp=13.4E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=2.3E-4 Cjsw=117p Ld=3E-7 Pb=0.90 Tox=50n Lambda=0.02 Uo=210 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) *ASIC Circ. Sim., p.123 * *** SUBCIRCUIT of SMALL SIGNAL EQUIVALENT CIRCUIT MODEL *** *Example: *T-Equivalent of Common-Emitter .SUBCKT EQTE c b e *1:Collector 2:Base 3:Emitter RB 4 5 400 RE e 5 26 RC c 5 50k FC c 5 VCP 99 VCP b 4 DC 0V .ENDS EQTE *Hibrid-Pi Equivalent .SUBCKT EQPI c b e *1:Collector 2:Base 3:Emitter RB b 4 50 RPI 4 e 2.6k CPI 4 e 50pF CC 4 c 3pF GC c e 4 e .ENDS EQPI *** SUBCIRCUIT of OP. Amplifier *Ideal opamp: no limiter, no offset .SUBCKT OPI NON INV OUT R1 NON INV 1G E1 OUT 0 (NON, INV) 100K ; OPEN-LOOP GAIN .ENDS * *Ideal opamp with limiter & buffer .SUBCKT OPLB NON INV OUT V+ V- E1 1 0 (NON, INV) 100K ; OPEN-LOOP GAIN R1 1 2 1MEG ; OUTPUT LIMITER* D1 2 V+ DLIM1 ; * D2 V- 2 DLIM1 ; * E2 3 0 (2, 0) 1 ; BUFFER R2 3 OUT 200OHM ; OUTPUT RESISTOR .MODEL DLIM1 D(IS=2E-14 N=.1 XTI=0 EG=0) .ENDS * *356type standard *SR=.5V/uS, fp1=10hz, fp2=1Mhz, no offset, no limiter .SUBCKT OP356S NON INV OUT RI NON INV 1MEG ; E1 1 0 (NON, INV) 20K ; MIN GAIN R2 1 2 5K ; POLE2 = R2,C2 C2 2 0 30PF ; J1 2 3 3 JCS1NL 1.1 J2 4 3 3 JCS1NL R1 4 5 8MEG ; POLE1 = R1,C1 C1 5 0 2NF ; SR=1MA/2NF .5V/US E2 6 0 (5, 0) 1 ROUT 6 OUT 50OHM ; OUTPUT RESISTOR .MODEL JCS1NL NJF(Beta=100m Betatce=0 Rd=0 Rs=0 Lambda=0 Vto=-0.1 + Vtotc=0 Is=0.001f Isr=0 N=1 Nr=2 Xti=0 Alpha=0 + Vk=0 Cgd=0 M=.5 Pb=.1 Fc=.5 Cgs=0 Kf=0 Af=1) .ENDS * *SR=.5V/uS, fp1=10hz, fp2=1Mhz, Vos=6mV, Ib=500nA, Ios=200nA .SUBCKT OP356X NON INV OUT V+ V- VOS NON NOS 6MV ; TC=30UV/DEG IB1 0 INV 500NA ; IB=500NA IB2 0 NOS 300NA ; IOFF=200NA RI NOS INV 1MEG ; E1 1 0 (NOS, INV) 20K ; MIN GAIN R2 1 2 5K ; POLE2 = R2,C2 C2 2 0 30PF ; J1 2 3 3 JCS1NL 1.1 J2 4 3 3 JCS1NL R1 4 5 8MEG ; POLE1 = R1,C1 C1 5 0 2NF ; SR=1MA/2NF .5V/US D1 5 V+ DLIM1 ; OUTPUT LIMITER D2 V- 5 DLIM1 E2 6 0 (5, 0) 1 ROUT 6 OUT 50OHM ; OUTPUT RESISTOR .MODEL DLIM1 D(IS=2E-14 N=.1 XTI=0 EG=0) .MODEL JCS1NL NJF(Beta=100m Betatce=0 Rd=0 Rs=0 Lambda=0 Vto=-0.1 + Vtotc=0 Is=0.001f Isr=0 N=1 Nr=2 Xti=0 Alpha=0 + Vk=0 Cgd=0 M=.5 Pb=.1 Fc=.5 Cgs=0 Kf=0 Af=1) .ENDS * *** CMOS Logic (without digital node) *** 5um rule, gate oxide 500A, Psub 5E15cm-3, Nsub 1E16cm-3 *** resistance of poly=0 *** capacitance poly/ox/Al Tox=1.2um, capacitance poly/ox/poly Tox=0.6um * * Subcircuit CMOS NAND2 * .SUBCKT cmosNAND2 2 3 4 1 M1 5 2 0 0 NMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u M2 4 3 5 0 NMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u M3 4 2 1 1 PMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u M4 4 3 1 1 PMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u C1 2 0 0.006pF C2 3 0 0.006pF C3 4 0 0.019pF *5u Rule NMOS .MODEL NMOS1 NMOS(Level=2 Vto=0.5 Kp=35.2E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=4.9E-4 Cjsw=245p Ld=3E-7 Pb=0.94 Tox=50n Lambda=0.02 Uo=550 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) * *5u Rule PMOS .MODEL PMOS1 PMOS(Level=2 Vto=-0.5 Kp=13.4E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=2.3E-4 Cjsw=117p Ld=3E-7 Pb=0.90 Tox=50n Lambda=0.02 Uo=210 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) * .ENDS cmosNAND2 * * * Subcircuit CMOS NOR2 * .SUBCKT cmosNOR2 2 3 4 1 M1 5 2 1 1 PMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u M2 4 3 5 1 PMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u M3 4 2 0 0 NMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u M4 4 3 0 0 NMOS1 L=5u W=5u AD=18p AS=36p PD=12u PS=12u C1 2 0 0.006pF C2 3 0 0.006pF C3 4 0 0.019pF *5u Rule NMOS .MODEL NMOS1 NMOS(Level=2 Vto=0.5 Kp=35.2E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=4.9E-4 Cjsw=245p Ld=3E-7 Pb=0.94 Tox=50n Lambda=0.02 Uo=550 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) * *5u Rule PMOS .MODEL PMOS1 PMOS(Level=2 Vto=-0.5 Kp=13.4E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=2.3E-4 Cjsw=117p Ld=3E-7 Pb=0.90 Tox=50n Lambda=0.02 Uo=210 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) * .ENDS cmosNOR2 * * Subcircuit CMOS INV * .SUBCKT cmosINV 2 3 1 M1 3 2 0 0 NMOS1 L=5u W=5u AD=36p AS=36p PD=24u PS=24u M2 3 2 1 1 PMOS1 L=5u W=5u AD=36p AS=36p PD=24u PS=24u C1 2 0 0.019pF C2 3 0 0.019pF *5u Rule NMOS .MODEL NMOS1 NMOS(Level=2 Vto=0.5 Kp=35.2E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=4.9E-4 Cjsw=245p Ld=3E-7 Pb=0.94 Tox=50n Lambda=0.02 Uo=550 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) * *5u Rule PMOS .MODEL PMOS1 PMOS(Level=2 Vto=-0.5 Kp=13.4E-6 Nsub=1E16 Cgso=210p Cgdo=210p + Cj=2.3E-4 Cjsw=117p Ld=3E-7 Pb=0.90 Tox=50n Lambda=0.02 Uo=210 + Ucrit=1E4 Utra=0.3 Uexp=0.1 Vmax=5E4 Neff=5.0) * .ENDS cmosINV *