集積回路工学A,B

SEARCH

• 
  AND検索 OR検索

最新の10件

LINKS

• 北川章夫
• 集積回路工学研究室

短縮URL http://urx3.nu/W8LZ

Outline †

集積回路工学第A,Bでは、基本的なCMOSディジタル回路のトランジスタレベルからの設計技術とシステムの性能見積り方法、CADツールを用いたフルカスタム設計（手動設計）方法などを学びます。また、集積回路工学第C, D（マイクロプロセッサの演算器やメモリなどのサブシステムレベル設計）を受講する際に必要な基礎知識となります。

In this course, the various logic functions and dc transfer characteristics of the CMOS logic circuits are theoretically analyzed. Then, the design methods of high-performance CMOS large scale integration (LSI) will be discussed. In addition, the course focuses on principles of scaling rules and effects of metal-oxide-semiconductor field effect transistors (MOSFET) and interconnects in LSIs.

Information †

• Syllabus (Integrated Circuit A, Japanese)
• Syllabus (Integrated Circuit B, japanese)

• Syllabus (Integrated Circuit A, English)
• Syllabus (Integrated Circuit B, English)

Recommended video †

• LSI設計常識講座 (Prof. T. Nakura, Fukuoka University)

Question and Answer †

• Any question is welcome in the class.
• [Office hours] 16:30 - 18:00 on the day, at room 2B713

Reference materials of LTspice †

• MOSFET device model
• MOSFET symbolmosfet_symbols.zip
• LTspiceの設定に関する資料公開作業日誌
• LTspiceの初心者向け解説本
• LTspiceの操作に関する資料LTspice雑記帳

Course materials †

• 0.1 Course information
• 1.1 Technology trends
• 2.1 Structure and Functions of MOSFET
• 2.2 CMOS static logic gates
• 2.3 Transmission gate and tristate
• 2.4 Latch and flip-flop
• 3.1 Design of logic functions
• 3.2 Combinational logic
• 3.3 Synchronization
• 3.4 Sequential logic
• 4.1 I-V characteristics of MOSFET
• 4.2 C-V characteristics of MOSFET
• 4.3 Device model
• 4.4 DC transfer characteristic
• 5.1 CMOS process
• 5.2 Layout design
• 6.1 Operating speed
• 6.2 Power consumption
• 6.3 Scaling rule
• 7.1 Design flow
• 7.2 Implementation of design
• 8.1-1 Design exercises (Full custom)
• 8.1-2 Design exercises (Gate array)